Photoconductivity of SrBi2Ta2O9 Thin Films
نویسنده
چکیده
Photoconductive properties of SrBi2Ta2O9 thin ®lms in the 250±400 nm wavelength range were investigated. The ®lms were deposited on Pt/SiO2/Si substrates using the Chemical Solution Deposition and were crystallized by conventional thermal annealing at 850 C. One sensitivity maximum was observed in the spectral distribution of the photoconductive signal and was attributed to band-to-band generation in the ®lm. The wavelength corresponding to this maximum was found to be dependent on the applied voltage, on the delay time, de®ned as the time between the application of light on the ®lm and the reading of the generated photocurrent, and on the wavelengths sweeping direction (up or down). The gap value was estimated to be around 3.94±4 eV. # 1999 Elsevier Science Limited. All rights reserved
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Laser Annealing of MOCVD Deposited Ferroelectric SrBi 2 Ta 2 O 9 , Pb ( ZrXTi 1 - X ) O 3 and CeMnO 3 Thin Films
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